Related papers: Optimizing spin polarization in quantum dot vertic…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
We show that optical pumping of electron spins in individual InGaAs quantum dots leads to strong nuclear polarisation that we measure via the Overhauser shift (OHS) in magneto-photoluminescence experiments between 0 and 4T. We find a…
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D…
We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that…
We show that detuned optical pulse trains with a modest spectral width can polarize nuclear spins in InAs quantum dots. The pulse bandwidth is large enough to excite a coherent superposition of both electron spin eigenstates in these…
In the optical pumping systems based on the pump-probe arrangement, the spin polarization of the atoms is generally monitored utilizing the probe laser beam, in which way an extra perturbation must be introduced and thus affects the normal…
We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the…
Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
The generation of an out-of-equilibrium population of spin-polarized carriers is a keystone process for quantum technologies and spintronics alike. It can be achieved through the so-called optical spin orientation by exciting the material…
Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
In the field of spin-controlled semiconductor lasers, massive effort has been focused upon materials with long spin relaxation times (~ns). In contrast, we demonstrate room-temperature spin-polarized ultrafast pulsed lasing in InGaAs…
Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…
We show that ionization of noble gas atoms by strong infrared circularly polarized laser field under standard exerimental conditions can yield electrons with up to 100% spin polarization in energy resolved measurements. Spin polarization…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on'…
We report on experimental study of the exciton-polariton emission (PE) polarization noise below and above the polariton lasing threshold under continuous wave nonresonant excitation. The experiments were performed with a high-Q graded…
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and…