Related papers: Magnetization Dependent In-plane Anomalous Hall Ef…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
The 'magnetoelectric effect' arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological…
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…
Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly…
The anomalous Hall effect (AHE), which provides a bridgeway between the geometry of quantum wavefunctions and transport measurements, has been a key focus of intensive studies. In addition to the well-studied linear AHE, governed by the…
Nonlinear Hall responses are a direct electrical probe of quantum geometry, but they are symmetry-forbidden in many pristine two-dimensional metals. We show that layer-selective magnetic proximity unlocks intrinsic linear and nonlinear Hall…
Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
We identify a previously unrecognized class of two-dimensional (2D) collinear magnetic phase that extends beyond the established categories of ferromagnets, antiferromagnets, and altermagnets. These type IV 2D collinear magnets exhibit…
The in-plane (thermal) Hall effect is an unconventional transverse response when the applied magnetic field is in the (heat) current plane. In contrast to the normal Hall effect, the in-plane Hall effect requires the absence of certain…
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…
The quantum anomalous Hall effect (QAHE) is a quantum phenomenon in which a two-dimensional system exhibits a quantized Hall resistance $h/e^2$ in the absence of magnetic field, where $h$ is the Planck constant and $e$ is the electron…
We theoretically investigate the anomalous Hall effect (AHE) that requires neither a net magnetization nor an external magnetic field in collinear antiferromagnets. We show that such an emergent AHE is essentially caused by a ferroic…
The interaction between conduction electrons and localized magnetic moments profoundly influences the electrical and magnetic properties of materials, giving rise to a variety of fascinating physical phenomena and quantum effects. Here, we…
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…