Related papers: Single-mode InAs/GaAs quantum-dot DFB laser with o…
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
We present an approach to the molecular-beam epitaxy of high-Q planar GaAs-based microcavities in which the AlGaAs high-index layers of the distributed Bragg reflectors (DBRs) are replaced by short-period GaAs/AlAs superlattices (digital…
Eliminating the fine structure splitting (FSS) of excitons in self-assembled quantum dots (QDs) is essential to the generation of high quality entangled photon pairs. It has been shown that the FSS has a lower bound under uniaxial stress.…
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of…
In this paper we propose a new optical ring resonator with a very high Q-factor, to be used as a basic element in a wide range of physics and engineering applications. We theoretically demonstrate that in large size conventional ring…
Although nanolasers typically have low Q-factors and high lasing thresholds, they have been successfully implemented with various gain media. Intuitively, it seems that an increase in the gain coefficient would improve the characteristics…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
Recombination through quantum dots (QDs) is a major factor that limits efficiency of QD intermediate-band (IB) solar cells. Our proposal for a new IB solar cell based on type-II GaSb QDs located outside the depletion region of a GaAs…
We report on optomechanical GaAs disk resonators with ultrahigh quality factor - frequency product Qf. Disks standing on a simple pedestal exhibit GHz breathing modes attaining a Qf of 10^13 measured under vacuum at cryogenic temperature.…
We propose a degenerate version of the Bragg condition, associated to a degenerate band edge (DBE). A standard Bragg condition can be implemented using a periodic grating that operates at the regular band edge. The structure we propose to…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
Narrow-linewidth, compact and robust laser systems are of high interest, especially with prospects for portable quantum metrological applications. We realized an external cavity DFB-laser incorporating an intra-cavity EOM in a fully…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
This letter describes the design and operation of a polymer-based third order distributed feed-back (DFB) microfluidic dye laser. The device relies on light-confinement in a nano-structured polymer film where an array of nanofluidic…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
We demonstrate thermal-noise-limited direct locking of a semiconductor distributed feedback (DFB) laser to a sub-1 mL volume, ultrastable optical cavity, enabling extremely compact and simple ultrastable laser systems. Using the…
We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and…