Related papers: SEMIDV: A Compact Semiconductor Device Simulator w…
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…
We describe Simudo, a free Poisson/drift-diffusion steady state device model for semiconductor and intermediate band materials, including self-consistent optical absorption and generation. Simudo is the first freely available device model…
Current quantum devices execute specific tasks that are hard for classical computers and have the potential to solve problems such as quantum simulation of material science and chemistry, even without error correction. For practical…
This study maps the quantum landscape of superconducting diodes (SDs) \cite{nadeem23} onto the quantum technology architecture, which is currently constrained by fundamental challenges in control and scalability. In the existing…
Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly…
In this article we propose two novel 3D finite element models, denoted method A and B, for electron and hole Drift-Diffusion (DD) current densities. Method A is based on a primal-mixed formulation of the DD model as a function of the…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…
Several types of detectors are used to detect charged particles in particle and nuclear physics experiments. Since the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of…
We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and…
An approximate method based on adiabatic time dependent density functional theory (TDDFT) is presented, that allows for the description of the electron dynamics in nanoscale junctions under arbitrary time dependent external potentials. In…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
The Semiempirical Pseudopotential Method (SEPM) has emerged as a valuable tool for accurately determining band structures, especially in the realm of low-dimensional materials. SEPM operates by utilizing atomic pseudopotentials, which are…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…