Simudo: a device model for intermediate band materials
Abstract
We describe Simudo, a free Poisson/drift-diffusion steady state device model for semiconductor and intermediate band materials, including self-consistent optical absorption and generation. Simudo is the first freely available device model that can treat intermediate band materials. Simudo uses the finite element method (FEM) to solve the coupled nonlinear partial differential equations in two dimensions, which is different from the standard choice of the finite volume method in essentially all commercial semiconductor device models. We present the continuous equations that Simudo solves, show the FEM formulations we have developed, and demonstrate how they allow robust convergence with double-precision floating point arithmetic. With a benchmark semiconductor pn-junction device, we show that Simudo has a higher rate of convergence than Synopsys Sentaurus, converging to high accuracy with a considerably smaller mesh. Simudo includes many semiconductor phenomena and parameters and is designed for extensibility by the user to include many physical processes.
Cite
@article{arxiv.1905.11303,
title = {Simudo: a device model for intermediate band materials},
author = {Eduard C. Dumitrescu and Matthew M. Wilkins and Jacob J. Krich},
journal= {arXiv preprint arXiv:1905.11303},
year = {2019}
}
Comments
15 pages. Forthcoming in Journal of Computational Electronics. Code available at github.com/simudo/simudo. This version contains new comparisons to other simulators, Figures 3 and 4, and is shortened and streamlined. Supplementary Information available on arXiv by downloading Source