Related papers: Hole spin splitting in a Ge quantum dot with finit…
Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies has significantly improved qubit quality, including the time…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
One and two-electron systems confined in a single and coupled quantum dots defined within a nanowire with a finite radius are studied in the context of spin-orbit coupling effects. Anisotropy of the spin-orbit interaction is discussed in…
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs),…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
We report on the theoretical study of the hole states in II-IV quantum dots of a spherical and ellipsoidal shape, described by a smooth potential confinement profiles, that can be modelled by a Gaussian functions in all three dimensions.…
Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits.…
Qubits encoded in the spin state of heavy holes confined in Si- and Ge-based semiconductor quantum dots are currently leading the efforts toward spin-based quantum information processing. The virtual absence of spinful nuclei in purified…
We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of…
We have proposed and validated an ansatz as effective potential for confining electron/hole within spherical quantum dot in order to understand quantum confinement and its consequences associated with energy states and band gap of Spherical…
Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOSFETs offers great potentialities in terms of integration…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
The selective confinement of light-holes (LHs) is demonstrated by introducing a low-dimensional system consisting of highly tensile-strained Ge quantum well enabling the design of an ultrafast gate-defined spin qubit under the electric…