Related papers: Hole spin splitting in a Ge quantum dot with finit…

We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…

Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band…

In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor…

Single spin measurement represents a major challenge for spin-based quantum computation. In this article we propose a new method for measuring the spin of a single electron confined in a quantum dot (QD). Our strategy is based on entangling…

Spherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. Nonparabolicity of the Si conduction band is described by the energy dependence of electron effective…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

In this work I investigate the influence of spin-orbit coupling on the magnetic field dependence of carrier states in a self-assembled quantum dot. I calculate the hole energy levels using the 6, 8 and 14 band k.p model. Through a detailed…

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with…

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…

We investigate the electron states in double asymmetric $\rm{HgTe/Cd_{x}Hg_{1-x}Te}$ quantum wells grown along the $[001]$ direction. The subbands are computed by means of the envelope function approximation applied to the 8-band Kane…

The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find…

We explore potentials that break time-reversal symmetry to confine the surface states of 3D topological insulators into quantum wires and quantum dots. A magnetic domain wall on a ferromagnet insulator cap layer provides interfacial states…

Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…

A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is…

Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In…

Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to…

In this dissertation we use sophisticated numerical methods in order to examine ground-state (GS) properties of two types of quantum systems with electron electron interactions: A quantum dot (QD) and a nano-wire. In the first half of the…

Due to Klein tunneling in graphene only quasi-bound states are realized in graphene quantum dots by electrostatic gating. Particles in the quasi-bound states are trapped inside the dot for a finite time and they keep bouncing back and forth…

The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of…