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Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…

Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…

Recently, we proposed a novel transistor architecture for 3D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dual-sided interconnects. With dual-sided power rails and signal tracks, FFET can achieve…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…

The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…

Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary…

Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones,…

As minimum area SRAM bit-cells are obtained when using cell ratio and pull-up ratio of 1, we analyze the possibility of decreasing the cell ratio from the conventional values comprised between 1.5-2.5 to 1. The impact of this option on…

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…