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The surface tension coefficient is a key parameter in fluid mechanics. The conventional method to measure it is to determine the critical surface tension that causes the rupture of a liquid film. However, this method has a large error…

Fluid Dynamics · Physics 2025-01-10 Ziyi Xu , Chongyuan Xu , Liwen Tong , Keyu Chen , Ziwei Dong

Characterization and determination of the optical constants for thin film silicon compensated through the transmittance spectrum is presented. Such properties were determined by R. Swanepoel model. Comparison between the refractive indices…

Materials Science · Physics 2019-08-02 W. A. Rojas C. , M. Chaparro P. , L. M. Pardo C. , M. I. Cruz F.

We describe an alternating current method to measure the Nernst effect in superconducting thin films at low temperatures. The Nernst effect is an important tool in the understanding superconducting fluctuations and, in particular, vortex…

Superconductivity · Physics 2020-10-28 Yuxiao Wu , Aviad Frydman , Arnab Roy

The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications.…

Optics · Physics 2022-11-18 Jingwei Li , Ruixuan Wang , Lutong Cai , Qing Li

X-ray reflectivity (XRR) is a powerful and popular scattering technique that can give valuable insight into the growth behavior of thin films. In this study, we show how a simple artificial neural network model can be used to predict the…

Amorphous thin film superconductors are promising alternatives for the development of superconducting radiation detectors, especially superconducting nanowire single photon detectors (SNSPDs) and superconducting microwire single photon…

Superconductivity · Physics 2025-10-08 Shekhar Chandra Pandey Shilpam Sharma , M. K. Chattopadhyay

A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder…

Materials Science · Physics 2015-05-13 Shriram Shivaraman , M. V. S. Chandrashekhar , John J. Boeckl , Michael G. Spencer

We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact…

The electronic properties of superconducting Sn films ($T_c \approx$ 3.8 K) change significantly when reducing the film thickness down to a few nm, in particular close to the percolation threshold. The low-energy electrodynamics of such Sn…

We report absorption and photoluminescence spectra of Si and SnO$_2$ polycrystalline nanofilms in the UV-Vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged 3.9 nm to 12.2 nm,…

Mesoscale and Nanoscale Physics · Physics 2014-05-21 Vladimir I. Makarov , Igor Khmelinskii

Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…

We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against…

Instrumentation and Methods for Astrophysics · Physics 2016-10-26 Hironobu Makitsubo , Takehiko Wada , Hirokazu Kataza , Makoto Mita , Toyoaki Suzuki , Keita Yamamoto

Accurate measurements of the cross-plane thermal conductivity {\Lambda}_cross of a high-thermal-conductivity thin film on a low-thermal-conductivity ({\Lambda}_s) substrate (e.g., {\Lambda}_cross/{\Lambda}_s>20) are challenging, due to the…

Materials Science · Physics 2018-05-18 Puqing Jiang , Bin Huang , Yee Kan Koh

Optical second harmonic generation (SHG) has been measured for the first time in reflection from the nanometer-thick films (6 to 40 nm) of the topological insulator Bi2Se3 using 1.51 eV (820 nm) Ti:Sapphire laser photons and revealed a…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Yuri D. Glinka , Sercan Babakiray , Trent A. Johnson , Mikel B. Holcomb , David Lederman

Accurate and high-efficiency film metrology remains a key challenge in High-Volume Manufacturing (HVM), where conventional spectroscopic reflectometry and white light interferometry (WLI) are either limited by model dependence or…

The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the…

Materials Science · Physics 2020-11-17 Marco Siniscalchi , Davide Tierno , Kristof Moors , Zsolt Tokei , Christoph Adelmann

The nonlinear response of materials, an increasingly important aspect of light-matter interaction, can be challenging to measure in highly absorbing materials. Here, we introduce an interferometric technique that enables a direct…

Optics · Physics 2024-11-25 C. D. Cruz , J. C. Stephenson , J. K. Wahlstrand

The quantum efficiency and reflectivity of thick, back-illuminated CCD's being fabricated at LBNL for astronomical applications are modeled and compared with experiment. The treatment differs from standard thin-film optics in that (a)…

Applied Physics · Physics 2017-09-13 D. E. Groom , S. Haque , S. E. Holland , W. F. Kolbe

Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a…

A procedure for measuring material thickness by means of necessarily-long acoustic wavelengths is examined. The approach utilizes a temporal phase lag caused by the impulse time of wave momentum transferred through a thin layer that is much…

Instrumentation and Detectors · Physics 2013-12-23 G. T. Clement , H. Nomura , H. Adachi , T. Kamakura
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