Related papers: Current Flow Mapping in Conducting Ferroelectric D…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3. This is achieved by performing a careful equivalent-circuit analysis of…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…
Ferroelectric domain wall devices offer a promising route to low-voltage, reconfigurable nanoelectronics by confining currents to nanoscale conducting interfaces within an insulating bulk. However, the potential for resistive heating and…
The global electronic properties of solid-state devices are strongly affected by the microscopic spatial paths of charge carriers. Visualising these paths in novel devices produced by scalable processes would provide a quality assessment…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Current driven domain wall motion in curved Heavy Metal/Ferrimagnetic/Oxide multilayer strips is investigated using systematic micromagnetic simulations which account for spin-orbit coupling phenomena. Domain wall velocity and…
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated temperatures. DWs show very different properties as compared…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
Ferroelectric domain walls are nm-sized interfaces between sections of different allowed values of the spontaneous polarization, the so-called domains. These walls - neutral or charged - can be created, displaced, deleted, and recreated…
Charge transport in nanostructures and thin films is fundamental to many phenomena and processes in science and technology, ranging from quantum effects and electronic correlations in mesoscopic physics, to integrated charge- or spin-based…
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth…
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very…
Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in…