Related papers: Electric field control of nonlinear Hall effect in…
The third-order nonlinear Hall effect (NLHE) serves as a sensitive probe of energy band geometric property, providing a new paradigm for revealing the Berry curvature distribution and topological response of quantum materials. In the Weyl…
The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the…
The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterization of NLHE evaluated through quantum transport in TaIrTe4…
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency…
The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications.…
The nonlinear Hall effect (NLHE) connects crystalline symmetry to quantum geometry, offering a probe of band topology beyond linear transport. While most studies have focused on the Berry curvature dipole in low-symmetry crystals,…
Intrinsic responses are of paramount importance in physics research, as they represent the inherent properties of materials, independent of extrinsic factors that vary from sample to sample, and often reveal the intriguing quantum geometry…
The recently discovered nonlinear Hall effect (NHE) in a few non-interacting systems provides a novel mechanism to generate second harmonic electrical Hall signals under time-reversal-symmetric conditions. Here, we introduce a new approach…
The nonlinear Hall effect (NLHE), an emergent response in systems with broken inversion symmetry, provides a powerful tool for probing topological transport properties. In this context, we investigate copper-substituted lead apatite…
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena…
We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternating current Iac (Iac<<Idc) in TaIrTe4, where the former…
The nonlinear Hall effect (NLHE), an emergent phenomenon in noncentrosymmetric systems, enables the generation of a transverse voltage without an external magnetic field through a second-order electrical response. However, achieving a…
Topological effects arising from the Berry curvature lead to intriguing transport signatures in quantum materials. Two such phenomena are the chiral anomaly and nonlinear Hall effect (NLHE). A unified description of these transport regimes…
After the experimental realization, the Berry curvature dipole (BCD) induced nonlinear Hall effect (NLHE) has attracted tremendous interest to the condensed matter community. Here, we investigate another family of Hall effect, namely,…
Two-dimensional van der Waals materials offer a highly tunable platform for generating emergent quantum phenomena through symmetry breaking. Stacking-induced symmetry breaking at interfaces provides an effective method to modulate their…
Nonlinear Hall effect (NHE) can be generated via Berry curvature dipole (BCD) on nonequilibrium Fermi surface in a non-magnetic system without inversion symmetry.To achieve a large BCD, strong local Berry curvatures and their variation with…
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible…
In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the…
Recent experimental and theoretical studies have revealed the emergence of a linear layer Hall effect (LHE) induced by hidden Berry curvature in \textrm{MnBi}$_{2}$\textrm{Te}$_{4}$ thin films. This phenomenon underscores the layer degree…
We propose the linear and nonlinear planar Hall effect (PHE) in tilted Weyl semimetals in the presence of an in-plane magnetic and electric field, where the field-induced Berry connection (FBC) plays a key role. We show that the PHE is…