Intrinsic responses are of paramount importance in physics research, as they represent the inherent properties of materials, independent of extrinsic factors that vary from sample to sample, and often reveal the intriguing quantum geometry of the band structure. Here, we report the experimental discovery of a new intrinsic response in charge transport, specifically the intrinsic nonlinear planar Hall effect (NPHE), in the topological semimetal TaIrTe4. This effect is characterized by an induced Hall current that is quadratic in the driving electric field and linear in the in-plane magnetic field. The response coefficient is determined by the susceptibility tensor of Berry-connection polarizability dipole, which is an intrinsic band geometric quantity. Remarkably, the signal persists up to room temperature. Our theoretical calculations show excellent agreement with the experimental results and further elucidate the significance of a previously unknown orbital mechanism in intrinsic NPHE. This finding not only establishes a novel intrinsic material property but also opens a new route toward innovative nonlinear devices capable of operating at room temperature.
@article{arxiv.2506.17730,
title = {Room-temperature intrinsic nonlinear planar Hall effect in TaIrTe$_4$},
author = {Chang Jiang and Fan Yang and Jinshan Yang and Peng Yu and Huiying Liu and Yuda Zhang and Zehao Jia and Xiangyu Cao and Jingyi Yan and Zheng Liu and Xian-Lei Sheng and Cong Xiao and Shengyuan A. Yang and Shaoming Dong and Faxian Xiu},
journal= {arXiv preprint arXiv:2506.17730},
year = {2025}
}