The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
@article{arxiv.2408.11658,
title = {Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4},
author = {Ji-Eun Lee and Aifeng Wang and Shuzhang Chen and Minseong Kwon and Jinwoong Hwang and Minhyun Cho and Ki-Hoon Son and Dong-Soo Han and Jun Woo Choi and Young Duck Kim and Sung-Kwan Mo and Cedomir Petrovic and Choongyu Hwang and Se Young Park and Chaun Jang and Hyejin Ryu},
journal= {arXiv preprint arXiv:2408.11658},
year = {2024}
}