We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1T-phase VSe2 nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at ∼77 K. Detailed angle-resolved and temperature-dependent measurements reveal a strong cubic relationship between the third-harmonic Hall voltage V3ω⊥ and the bias current Iω, persisting up to room temperature. Notably, the third-order NLHE demonstrates a twofold angular dependence and significant enhancement below the CDW transition temperature, indicative of threefold symmetry breaking in the CDW phase. Scaling analysis suggests that the intrinsic contribution from the Berry connection polarizability tensor is substantially increased in the CDW phase, while extrinsic effects dominate at higher temperatures. Our findings highlight the critical role of CDW-induced symmetry breaking in modulating quantum geometric properties and nonlinear transport phenomena in VSe2, paving the way for future explorations in low-dimensional quantum materials.
@article{arxiv.2501.15097,
title = {Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets},
author = {Zhao-Hui Chen and Xin Liao and Jing-Wei Dong and Xing-Yu Liu and Tong-Yang Zhao and Dong Li and An-Qi Wang and Zhi-Min Liao},
journal= {arXiv preprint arXiv:2501.15097},
year = {2025}
}