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A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…

With the development of novel computing schemes working at cryogenic temperatures, superconducting memory elements have become essential. In this context, superconducting quantum interference devices (SQUIDs) are promising candidates, as…

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…

Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se)…

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

The great potential of memristive devices for real-world applications still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET…

Natural abundance of sodium and its similar behavior to lithium triggered recent extensive studies of cost-effective sodium-ion batteries (SIBs) for large-scale energy storage systems. A challenge is to develop electrode materials with a…

This study introduces silicon substrates with a switchable magnetic contrast layer (MCL) for polarised neutron reflectometry experiments (PNR) at solid/liquid interface to study soft matter surface layers. The advantage with neutron…

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate…

Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

Here, we report the first experimental demonstration of InN nanowire solar cells deposited by RF sputtering with a bandgap energy of 1.78 eV. By adding an amorphous Si (a-Si) buffer to the n-InN/p-Si structure, we have improved the…

We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…

Current advancements in battery technologies require electrodes to combine high-performance active material such as Silicon (Si) with two-dimensional materials such as transition metal carbides (MXenes) for prolonged cycle stability and…

In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes.…

Silicon is a promising anode material for next-generation lithium-ion batteries. However, the volume change and the voltage hysteresis during lithiation and delithiation are two substantial drawbacks to their lifetime and performance. We…

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…

The Sn substituted Ni-Zn ferrites were synthesized by the standard double sintering technique using nano powders of nickel oxide (NiO), zinc oxide (ZnO), iron oxide (Fe2O3) and tin oxide (SnO2). The structural and electrical properties have…