Related papers: Effect of SOI substrate on silicon nitride resista…

We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…

We focus on the realistic maximization of the uplink minimum signal-to-interference-plus-noise ratio (SINR) of a general multiple-input single-output (MISO) system assisted by an intelligent reflecting surface (IRS) in the large system…

The paper studies a reconfigurable intelligent surface (RIS)-assisted multi-user uplink massive multiple-input multiple-output (MIMO) system with imperfect hardware. At the RIS, the paper considers phase noise, while at the base station,…

In this paper, we propose an optimization framework for rate splitting (RS) techniques in multiple-input multiple-output (MIMO) reconfigurable intelligent surface (RIS)-assisted systems, possibly with I/Q imbalance (IQI). This framework can…

This paper studies the performance of single-input multiple-output (SIMO) systems under receive antenna selection (RAS) and BPSK/QPSK modulations. At the receiver, a subset of branches are selected and combined using maximal-ratio combining…

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…

Reconfigurable intelligent surfaces (RIS) have been actively researched as a potential technique for future wireless communications, which intelligently ameliorate the signal propagation environment. In the conventional design, each RIS…

Reconfigurable Intelligent Surface (RIS) has recently been regarded as a paradigm-shifting technology beyond 5G, for its flexibility on smartly adjusting the response to the impinging electromagnetic (EM) waves. Usually, RIS can be…

The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells.

In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…

In this paper, we investigate the performance of multiple-input multiple-output (MIMO) fading channels assisted by a reconfigurable intelligent surface (RIS), through the employment of partition-based RIS schemes. The proposed schemes are…

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

Due to the growing popularity of optical superchannels and software defined networking, reconfigurable optical add-drop multiplexer (ROADM) architectures for superchannel switching have recently attracted significant attention. ROADMs based…

Semiconductor-based surface-enhanced Raman spectroscopy (SERS) substrates, as a new frontier in the field of SERS, are hindered by their poor electromagnetic field confinement, and weak light-matter interaction. Metasurfaces, a class of 2D…

The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…

Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se)…