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Breakdown characteristics of SiNx with different stoichiometries for resistive memories

Materials Science 2025-12-11 v1 Applied Physics
Authors: A. E. Mavropoulis , I. Kanellopoulos , G. Pissanos , G. Samara , N. Vasileiadis , E. Stavroulakis , P. Normand , G. Ch. Sirakoulis , P. Dimitrakis
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Abstract

The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells.

Keywords

SiNx breakdown stoichiometry RRAM LPCVD

Cite

@article{arxiv.2512.09681,
  title  = {Breakdown characteristics of SiNx with different stoichiometries for resistive memories},
  author = {A. E. Mavropoulis and I. Kanellopoulos and G. Pissanos and G. Samara and N. Vasileiadis and E. Stavroulakis and P. Normand and G. Ch. Sirakoulis and P. Dimitrakis},
  journal= {arXiv preprint arXiv:2512.09681},
  year   = {2025}
}

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