Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

A. E. Mavropoulis; N. Vasileiadis; P. Normand; C. Theodorou; G. Ch. Sirakoulis; S. Kim; P. Dimitrakis

doi:10.1016/j.sse.2024.109035

Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

Applied Physics 2025-02-04 v1 Materials Science

Authors: A. E. Mavropoulis , N. Vasileiadis , P. Normand , C. Theodorou , G. Ch. Sirakoulis , S. Kim , P. Dimitrakis

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Abstract

The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.

Keywords

MIS RRAM SiNx Al2O3 conductive filament compact model resistive switching

Cite

@article{arxiv.2502.01346,
  title  = {Effect of Al2O3 on the operation of SiNX-based MIS RRAMs},
  author = {A. E. Mavropoulis and N. Vasileiadis and P. Normand and C. Theodorou and G. Ch. Sirakoulis and S. Kim and P. Dimitrakis},
  journal= {arXiv preprint arXiv:2502.01346},
  year   = {2025}
}

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