Related papers: Ordered InAs QDs using prepatterned substrates by …
The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon…
Highly ordered one-dimensional arrays of nanodots, or nanobeads, are fabricated by forming nanoripples and nanodots in sequence, entirely by ion-beamsputtering (IBS) of Au(001). This demonstrates the capability of IBS for the fabrication of…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find…
Using a single-particle atomistic pseudopotential method followed by a many-particle configuration interaction method, we investigate the geometry, electronic structure and optical transitions of a self-assembled InAs/GaAs quantum ring…
Quantum dots (QDs) exhibit unique properties arising from their reduced size and quantum confinement effects, including exceptionally bright and tunable photoluminescence. Among these, CuInS$_{2}$ QDs have gained significant attention owing…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the…
We theoretically study the optical properties of an InAs/GaAs quantum dot (QD) near the area of the second-order resonance between an electron confined in the QD and two longitudinal optical phonons. We present the absorption spectra of an…
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…
A grand challenge of nanoscience is to master the control of structure and properties in order to go beyond present day functionality. The creation of nanostructures via atom manipulation by means of a scanning probe represents one of the…
Molecular building blocks interacting at the nanoscale organize spontaneously into stable mono- layers that display intriguing long-range ordering motifs on the surface of atomic substrates. The patterning process, if appropriately…
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon…
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single…