Related papers: Transport characterization and quantum dot couplin…

Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one…

I review a variety of model systems and their quantum critical points, motivated by recent experimental and theoretical developments. These are used to present a general discussion of the non-zero temperature crossovers in the vicinity of a…

In this work we analyze the nonequilibrium transport through a quantum impurity (quantum dot or molecule) attached to ferromagnetic leads by using a hybrid numerical renormalization group-time-dependent density matrix renormalization group…

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of…

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…

We study the linear conductance through a double-quantum-dot system consisting of an interacting dot in its Kondo regime and an effectively noninteracting dot, connected in parallel to metallic leads. Signatures in the zero-bias conductance…

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…

Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits. The…

Strongly interacting electron systems can provide insight into quantum many-body phenomena, such as Mott insulating behavior and spin liquidity, facilitating semiconductor optimization. The Fermi-Hubbard model is the prototypical model used…

We theoretically study the effects of bias-controlled interdot tunneling in vertically coupled quantum dots on the emission properties of spin excitons in various bias-controlled tunneling regimes. As a main result, for strongly coupled…

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor…

We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…

Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…

We review recent developments in nonlinear quantum transport through nanostructures and mesoscopic systems driven by thermal gradients or in combination with voltage biases. Low-dimensional conductors are excellent platforms to analyze both…

With recent experimental advancements demonstrating high-fidelity universal logic gates and basic programmability, Silicon-based spin quantum bit (qubit) have emerged as promising candidates for scalable quantum computing. However,…

The ability to engineer high-fidelity gates on quantum processors in the presence of systematic errors remains the primary barrier to achieving quantum advantage. Quantum optimal control methods have proven effective in experimentally…

We calculate the conductance through a single quantum dot coupled to metallic leads, modeled by the spin 1/2 Anderson model. We adopt the finite-U extension of the noncrossing approximation method. Our results are in good agreement with…

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…