Related papers: Transport characterization and quantum dot couplin…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain,…
In this article we review aspects of charge and heat transport in interacting quantum dots and molecular junctions under stationary and time-dependent non-equilibrium conditions due to finite electrical and thermal bias. In particular, we…
Several domains of society will be disrupted once millions of high-quality qubits can be brought together to perform fault-tolerant quantum computing (FTQC). All quantum computing hardware available today is many orders of magnitude removed…
We study a double quantum dot in the regime where each dot carries a spin-1/2. This system is described by the 2-impurity Kondo model, having a non-Fermi liquid fixed point for a critical value of the inter-impurity coupling. The…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a…
Quantum heat transport devices are currently intensively studied in theory. Experimental realization of quantum heat transport devices is a challenging task. So far, they have been mostly investigated in experiments with ultra-cold atoms…
In [Phys. Rev. A 107, 052420 (2023)] we showed that the quantum teleportation protocol can be used to detect quantum critical points (QCPs) associated with a couple of different classes of quantum phase transitions, even when the system is…
Strong correlation effects in a capacitively coupled double quantum-dot setup were previously shown to provide the possibility of both entangling spin-charge degrees of freedom and realizing efficient spin-filtering operations by static…
We present a general strategy for mapping fermionic systems to quantum hardware with square qubit connectivity which yields low-depth quantum circuits, counted in the number of native two-qubit fSIM gates. We achieve this by leveraging…
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…
An open fully connected system of qubits at nonzero temperature is driven within a finite time interval along various paths in the space of its control parameters. The driving leads across finite-size precursors of first- and second-order…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information -…