Related papers: Novel Electrical Characterization Method for Antif…
Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work…
Rapid progress in aberration corrected electron microscopy necessitates development of robust methods for the identification of phases, ferroic variants, and other pertinent aspects of materials structure from imaging data. While…
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…
Born effective charge (BEC), a fundamental quantity in lattice dynamics and ferroelectric theory, provides a quantitative measure of linear polarization response to ionic displacements. However, it does not account for higher-order effects,…
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics,…
The two-dimensional ferroelectric (FE) material CuInP$_2$S$_6$ (CIPS) has garnered considerable interest due to its out-of-plane ferroelectricity at room temperature. However, a notable discrepancy exists between experiments and density…
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films are promising for next-generation memory and logic devices due to their CMOS compatibility and scalability. The spatial uniformity of the orthorhombic (O) phase is crucial for optimizing…
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy…
Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this…
We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point…
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay…
Here we demonstrate that MnTe epitaxial films with zinc-blend structure and MnTe/ZnTe multilayers should show ferroelectric polarization in antiferromagnetically (AFM) ordered state and thus belong to multiferroics. Spontaneous…
Compression-induced buckling instability of metal thin films on a compliant base result in surface wrinkles. A stiff thin film, perfectly bonded to an infinitely deep pre-stretched dielectric elastomer (DE) substrate, is considered. Linear…
We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm…
Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
We introduce the concept of antiferron modes in ferroelectric materials as dynamically stabilized collective excitations over inverted polarization states that decrease the system energy. While ferrons represent quantized oscillations…
Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed…