Related papers: Atomic layer etching of SiO$_2$ using sequential S…
We have achieved stimulated laser cooling of thermal rubidium atomic beams on a silicon chip. Following pre-collimation via a silicon microchannel array, we perform beam brightening via a blue-detuned optical molasses. Owing to the small…
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) method that integrates first-principles defect properties and…
We describe a controllable and precise laser tweezers for Bose-Einstein condensates of ultracold atomic gases. In our configuration, a laser beam is used to locally modify the sign of the scattering length in the vicinity of a trapped BEC.…
The electronic excitation occurring on adsorbates at ultrafast time scales from optical lasers that initiate surface chemical reactions is still an open question. Here, we report the ultrafast temporal evolution of X-ray absorption…
Plasma electrolytic oxidation (PEO) is a process for obtaining oxide coatings on valve metals. Mostly PEO is done in an aqueous solution electrolyte which limits the size of treated parts due to the system heating up. In presented work an…
Successive ionic layer adsorption and reaction (SILAR) method is based on the adsorption and reaction of the ions in the cationic solution and the ionic solution, respectively. This method is simple, inexpensive, large-scale deposition,…
Particle detectors based on liquid argon (LAr) have recently become recognized as an extremely attractive technology for the direct detection of dark matter as well as the measurement of coherent elastic neutrino-nucleus scattering…
Although silicon oxynitrides are important semiconductors for many practical applications, their potential second-order nonlinear optical (NLO) applications, regardless of balanced or controllable performance, have never been systemically…
Polyhedral nanocrystals of <alpha>-Fe2O3 are successfully synthesized by annealing FeCl3 on silicon substrate at 1000 oC in the presence of H2 gas diluted with argon (Ar). Uniformly shaped polyhedral nanoparticles (diameter ~50-100 nm) are…
A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the…
Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a…
Second-harmonic generation (SHG) is a second-order nonlinear optical process that is not allowed in media with inversion sym-metry. However, due to the broken symmetry at the surface, surface SHG still occurs, but is generally small. We…
The stability and accuracy of atomic devices can be degraded by the evolution of their cell inner atmosphere. Hence, the undesired entrance or leakage of background or buffer gas, respectively, that can permeate through the cell walls,…
The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study…
While DNA origami is a powerful bottom-up fabrication technique, the physical and chemical stability of DNA nanostructures is generally limited to aqueous buffer conditions. Wet chemical silicification can stabilise these structures but…
Self-guided femtosecond laser pulses propagating in low-pressure gas can generate plasma filaments, establishing a new framework for plasma wakefield acceleration. Unlike conventional schemes relying on mechanically confined or preformed…
A novel laser cooling mechanism based on many body effects is presented. The method can be applicable for cooling a large class of atoms and molecules in higher density than commonly excepted by existing methods. The cooling mechanism…
The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped…
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated…
We present a design for a continuous-wave (CW) atom laser on a chip and describe the process used to fabricate the device. Our design aims to integrate quadrupole magnetic guiding of ground state Rb atoms with continuous surface adsorption…