Related papers: Atomic layer etching of SiO$_2$ using sequential S…
Achieving high temperature ferromagnetism by doping transition metals thin films is seen as a viable approach to integrate spin-based elements in innovative spintronic devices. In this work we investigated the effect of Fe doping on…
We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al…
With a two-dimensional (2D) optical mask, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrofobic resist layer,…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
The AlF molecule, currently subject to laser cooling and trapping efforts, has the advantage that it can be efficiently produced in a thermochemical reaction between sublimated aluminum trifluoride and aluminum metal. Here we present a…
A process of atomic layer deposition combined with self assembled monolayers was used to investigate the possible modification of polyurethane paint surfaces. First, we used an ALD process to produce thin and uniform Al2O3 coatings of these…
Recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum…
Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial…
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath…
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on silicon carbide (4H-SiC) substrates. All the three dielectric…
CeO$_x$-based nanoforms are widely used in catalysis, or biomedical applications due to their redox activity and oxygen storage capacity. The key parameters determining their surface chemistry are the Ce$^{3+}$/Ce$^{4+}$ ratio and the…
Metal-assisted chemical etching of silicon is a promising method for fabricating nanostructures with a high aspect ratio. To define a pattern for the catalyst, lift-off processes are commonly used. The lift-off step however is often a…
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…
We demonstrate that the surface of the honeycomb lattice iridate Na$_2$IrO$_3$ is extremely tunable by plasma etching. We have succeeded in turning the surface of Na$_2$IrO$_3$ metallic by Ar plasma etching which leads to the removal of Na…
We report a direct, maskless electron beam-induced etching (EBIE) process for diamond in air, enabling high-precision patterning without lithography or plasma processing. Through a comprehensive analysis of electron-gas, electron-diamond,…
An intense femtosecond-laser excitation of a solid induces highly nonthermal conditions. In materials like silicon, laser-induced bond-softening leads to a highly incoherent ionic motion and eventually nonthermal melting. But is this…
Plasma electrolytic oxidation (PEO) processing of EV 31 magnesium alloy has been carried out in fluoride containing electrolyte under bipolar pulse current regime. Unusual PEO cathodic micro-discharges have been observed and investigated.…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
The (111) surface of CaF$_2$ has been intensively studied with large-amplitude frequency-modulation atomic force microscopy and atomic contrast formation is now well understood. It has been shown that the apparent contrast patterns obtained…
Stability and precision of atomic devices are closely tied to the quality and stability of the internal atmosphere of the atomic vapor cells on which they rely. Such atmosphere can be stabilized by building the cell with low permeation…