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Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices…

All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…

Led by the rise of the internet of things, the world is experiencing exponential growth of generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process and extract meaningful…

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear…

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…

Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…

The thesis investigates the utilization of memristive and memcapacitive crossbar arrays in low-power machine learning accelerators, offering a comprehensive co-design framework for deep neural networks (DNN). The model, implemented through…

Abstract: Bionic learning with fused sensing, memory and processing functions outperforms artificial neural networks running on silicon chips in terms of efficiency and footprint. However, digital hardware implementation of bionic learning…

Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…

Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered…

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…