Related papers: High-Performances AlGaN-based DUV-LED via Under-Le…
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain…
Here, we report a comprehensive modeling framework to unravel the efficiency roll-off in Perovskite light emitting diodes (PeLEDs). Our model self-consistently accounts for a positive feedback mechanism which involves diverse phenomena like…
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate…
Strong light-matter coupling has garnered significant attention for its potential to optimize optoelectronic responses. In this study, we designed open cavities featuring non-local metasurfaces composed of aluminum nanoparticle arrays. The…
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of…
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how…
Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a…
We report conductance measurements in quantum wires made of aluminum arsenide, a heavy-mass, multi-valley one-dimensional (1D) system. Zero-bias conductance steps are observed as the electron density in the wire is lowered, with additional…
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit…
A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in…
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
The electronic and transport properties of aluminum-graphene composite materials were investigated using ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the…
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum…
We investigate laser-induced quantum interference phenomena in superradiance processes and in an ensemble of initially excited $\Lambda-$type closely packed three-level emitters. The lower doublet levels are pumped with a coherent laser…
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…
For electrons above a superfluid helium film suspended on a specially designed dielectric substrate, $z=h(y)$, we obtain that both the transverse, along $z$, and the lateral, along $y$, quantizations are strongly enhanced due to a strong…
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn(1-x)MgxO core shell quantum…
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum…
Coherent light sources in deep ultra-violet (DUV) is essential for various applications such as biomedical imaging and biosensing. Nonlinear crystals (NLCs) generate DUV light, but limited by its bulky thickness, low transparency, and…