Related papers: High-Performances AlGaN-based DUV-LED via Under-Le…
White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light…
Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we…
Angle-independent, narrowband emission is required for many optoelectronic devices, ranging from high-definition displays to sensors. However, emerging materials for electroluminescent devices, such as organics and perovskites, show…
AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
Organic light-emitting diodes (OLEDs) have successfully entered the display market and continue to be attractive for many other applications. As state-of-the-art OLEDs can reach an internal quantum efficiency (IQE) of almost 100 %, light…
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…
Quarter-wave OLEDS are microcavity devices that can operate in the low finesse limit and achieve high efficiency (> 300 lm/W) by using interference to reduce the onset current for the transition to stimulated emission. In this work we study…
Computer simulations with Synopsys' Sentaurus TCAD are used to study the effect of the molar concentration of aluminum in the active and waveguide regions on the energy spectrum of carriers in Quantum Well (QW) and the optical spectral…
We present a quantum theoretical analysis of the electroluminescence from an intersubband transition of a quantum well structure embedded in a planar microcavity. By using a cluster factorization method, we have derived a closed set of…
Optical interconnects are foreseen as a potential solution to improve the performance of data transmission in high speed integrated circuits since electrical interconnects operating at high bit rates have several limitations which creates a…
The concept of Dielectric Laser Acceleration (DLA) provides highest gradients among non-plasma particle accelerators. However, stable beam transport and staging have not been shown experimentally yet. We present a scheme that confines the…
Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for…
We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction…
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the…
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…
Multipartite entanglement plays an important role in quantum information processing and quantum metrology. Here, the dressing-energy-level-cascaded (DELC) four-wave mixing (FWM) processes are proposed to generate all-optical controlled…