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One of the major barriers that CMOS devices face at nanometer scale is increasing parameter variation due to manufacturing imperfections. Process variations severely inhibit the reliable operation of circuits, as the operational frequency…

The emergence of Vision-Language Models (VLMs) is a significant advancement in integrating computer vision with Large Language Models (LLMs) to enhance multi-modal machine learning capabilities. However, this progress has also made VLMs…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

As a test of general applicability, we use the recently proposed spin-wave delay line active-ring reservoir computer to perform the spoken digit recognition task. On this, classification accuracies of up to 93% are achieved. The tested…

Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…

Spin Transfer Torque RAM (STTRAM) is a promising candidate for Last Level Cache (LLC) due to high endurance, high density and low leakage. One of the major disadvantages of STTRAM is high write latency and write current. Additionally, the…

Event detection is the first step in event-based non-intrusive load monitoring (NILM) and it can provide useful transient information to identify appliances. However, existing event detection methods with fixed parameters may fail in case…

We study the problem of formally verifying the robustness to adversarial examples of support vector machines (SVMs), a major machine learning model for classification and regression tasks. Following a recent stream of works on formal…

Many real-world software tasks require exact transcription of provided data into code, such as cryptographic constants, protocol test vectors, allowlists, and calibration tables. These tasks are operationally sensitive because small…

In our previous work we have introduced the logic STL*, an extension of Signal Temporal Logic (STL) that allows value freezing. In this paper, we define robustness measures for STL* by adapting the robustness measures previously introduced…

Architectures that incorporate Computing-in-Memory (CiM) using emerging non-volatile memory (NVM) devices have become strong contenders for deep neural network (DNN) acceleration due to their impressive energy efficiency. Yet, a significant…

Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation…

In this paper, we present a unified FPGA based electrical test-bench for characterizing different emerging NonVolatile Memory (NVM) chips. In particular, we present detailed electrical characterization and benchmarking of multiple…

Large Language Models (LLMs) and their multimodal variants (LVLMs) hold immense promise for scientific and engineering applications, particularly in processing visual information like scientific diagrams. However, their practical deployment…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Computing-in-Memory architectures based on non-volatile emerging memories have demonstrated great potential for deep neural network (DNN) acceleration thanks to their high energy efficiency. However, these emerging devices can suffer from…

As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…

Large language models used for clinical abstraction are sensitive to prompt wording, yet most work treats prompts as fixed and studies uncertainty in isolation. We argue these should be treated jointly. Across two clinical tasks (MedAlign…

Automatic Speech Recognition (ASR) plays a crucial role in human-machine interaction and serves as an interface for a wide range of applications. Traditionally, ASR performance has been evaluated using Word Error Rate (WER), a metric that…