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Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…
On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Short Read Alignment Mapping Metrics (SRAMM): is an efficient and versatile command line tool providing additional short read mapping metrics, filtering, and graphs. Short read aligners report MAPing Quality (MAPQ), but these methods…
Byte-addressable non-volatile memory (NVM) features high density, DRAM comparable performance, and persistence. These characteristics position NVM as a promising new tier in the memory hierarchy. Nevertheless, NVM has asymmetric read and…
In recent years, researchers have explored use of non-volatile devices such as STT-RAM (spin torque transfer RAM) for designing on-chip caches, since they provide high density and consume low leakage power. A common limitation of all…
Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is…
Non-Volatile Random Access Memory (NVRAM) is a novel type of hardware that combines the benefits of traditional persistent memory (persistency of data over hardware failures) and DRAM (fast random access). In this work, we describe an…
This paper presents a PVT-resilient, subthreshold SRAM-based computing-in-memory (CIM) macro tailored for energy-efficient spiking neural networks (SNNs). The macro integrates in-situ current sensors and distributed voltage regulators to…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Resistive Random-Access Memory (ReRAM) crossbar arrays are promising candidates for in-situ matrix-vector multiplication (MVM), a frequent operation in Deep Learning algorithms. Despite their advantages, these emerging non-volatile memories…
Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
Large language models (LLMs) are increasingly used as decision-support tools in data-constrained scientific workflows, where correctness and validity are critical. However, evaluation practices often emphasize stability or reproducibility…
The energy consumption of DRAM is a critical concern in modern computing systems. Improvements in manufacturing process technology have allowed DRAM vendors to lower the DRAM supply voltage conservatively, which reduces some of the DRAM…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
Non-volatile memory (NVM), also known as persistent memory, is an emerging paradigm for memory that preserves its contents even after power loss. NVM is widely expected to become ubiquitous, and hardware architectures are already providing…
Neuromorphic computing systems uses non-volatile memory (NVM) to implement high-density and low-energy synaptic storage. Elevated voltages and currents needed to operate NVMs cause aging of CMOS-based transistors in each neuron and synapse…
Sensors and actuators based on resonant micro-electro-mechanical systems (MEMS), such as scanning micro mirrors, are well-established in automotive and consumer products. As the areas of application broaden, the requirements for the MEMS…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations,…