Related papers: Non-reciprocity in magnon mediated charge-spin-orb…
From the viewpoint of classical electrodynamics, we identify the role of spin-to-orbital angular momentum conversion in spin Hall effect of light (SHE). We introduce a distinct separation between spin and orbital angular momenta to clarify…
Spin is an intrinsically quantum property, characterized by angular momentum. A change in the spin state is equivalent to a change in the angular momentum or mechanical torque. This spin-induced torque has been invoked as the intrinsic…
In chiral magnets with intrinsic inversion symmetry breaking, it has been known that two spin waves moving in opposite directions can propagate at different velocities, exhibiting a phenomenon called magnetochiral nonreciprocity which…
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…
We investigate the transfer and control of nonreciprocity through magnons themselves in permalloy thin films deposited on surface oxide silicon substrate. Evidences of nonreciprocal emergence of hybridized dipole exchange magnons (spin…
State-of-the-art developments in magnetic devices rely on manufacturing faster, more efficient memory elements. A significant development in this direction has been the discovery of orbital torques, which employ the orbital angular momentum…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field.…
Noncollinear antiferromagnets can generate a transverse electrical response known as the anomalous Hall effect, even though they possess almost no net magnetization. The microscopic origin of this behaviour, however, has remained unclear…
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $\chi_{SHE}$, can be estimated for Pt…
We investigate nonlocal vortex motion in weakly pinning a-NbGe nanostructures, which is driven by a transport current I and remotely detected as a nonlocal voltage Vnl. At high I, the measured Vnl exhibits dramatic sign reversals that at…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession…
We demonstrate a violation of local reciprocity in the interconversion between charge and orbital currents. By investigating orbital torque and orbital pumping in W/Ni bilayers, we show that the charge-orbital interconversion in the bulk of…
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…