Related papers: Probing g-tensor reproducibility and spin-orbit ef…

Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…

We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…

We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…

Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum…

We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…

We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…

Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to…

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…

We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…

We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced…

We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…

Germanium hole spin qubits based on strained Ge/SiGe quantum well have attracted much research attention due to the strong spin-orbit coupling. In particular, the strain dependence of the heavy-hole--light-hole mixing and thus the…

In the presence of spin-orbit coupling, quantum models for semiconductor materials are generally not exactly solvable. As a result, understanding of the strong spin-orbit coupling effects in these systems remains poor. Here we develop an…

Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our…

We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin…

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric…

We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a…

Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing. However, their current performance is mostly limited by large dot-to-dot variability that leads to uncontrolled qubit…