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Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling…
By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is…
Theories with both electric and magnetic charges ("mutually non-local" theories) have several major obstacles to calculating scattering amplitudes. Even when the interaction arises through the kinetic mixing of two, otherwise independent,…
In addition to possessing fractional statistics, anyon excitations of a 2D topologically ordered state can realize symmetry in distinct ways , leading to a variety of symmetry enriched topological (SET) phases. While the symmetry…
Conduction band-edge spin-orbit splitting (SOS) in monolayer transition metal dichalcogenides determines a competition between bright and dark excitons and sets conditions for spintronics applications of these semiconductors. Here, we…
We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control,…
Motivated by recent experiments, in which the Kondo effect has been observed for the first time in a double quantum-dot structure, we study electron transport through a system consisting of two ultrasmall, capacitively-coupled dots with…
The eigenstates in the presence of a step defect (SD) along $x$ or y axis on the surface of topological insulators are exactly solved. It is shown that unlike the electronic states in conventional metals, the topological surface states…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~800 degrees C. Scanning tunneling microscopy (STM) and…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
High precision measurements of the polarized electron beam-spin asymmetry in semi-inclusive deep inelastic scattering (SIDIS) from the proton have been performed using a 10.6~GeV incident electron beam and the CLAS12 spectrometer at…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
The interplay of different emergent phenomena -- superconductivity (SC) and domain formation -- appearing on different spatial and energy scales are investigated using high-resolution scanning tunneling spectroscopy (STS) in the…
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
The porosities and tortuosities are commonly utilized to characterize the microstructure of a Li-ion battery's separator and are adopted as key input parameters in advanced battery models. Herein, a general classification of the tortuosity…