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Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…
Using exact diagonalization numerical methods, as well as analytical arguments, we show that for the typical electron densities in chaotic and disordered dots the peak spacing distribution is not bimodal, but rather Gaussian. This is in…
The Simons Observatory (SO) is a cosmic microwave background experiment with over 67,000 polarization-sensitive transition-edge sensor (TES) detectors currently installed for use in observations and plans to increase the total detector…
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically…
We describe a field-theoretic approach to calculate quantum shot noise in nanoscale conductors from first principles. Our starting point is the second-quantization field operator to calculate shot noise in terms of single quasi-particle…
Within random matrix theory for quantum dots, both the dot's one-particle eigenlevels and the dot-lead couplings are statistically distributed. While the effect of the latter on the conductance is obvious and has been taken into account in…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in…
Using a Scanning Tunneling Microscope (STM), we investigate the Local Density of States (LDOS) of artificially fabricated normal metal nano-structures in contact with a superconductor. Very low temperature local spectroscopic measurements…
We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find…
We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in…
We report the first measurement of the opening angle distribution between pairs of jets produced in high-energy collisions of transversely polarized protons. The measurement probes (Sivers) correlations between the transverse spin…
SiGe heterostructures integrated with Si via virtual substrate (VS) growth are promising hosts for spin qubits. While VS growth targets plastic relaxation, residual cross-hatch strain inhomogeneity propagates into heterostructure…
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
The spurious states found in numerical implementations of envelope function models for semiconductor heterostructures and nanostructures are artifacts of the use of the centered-difference formula. They are readily removed by employing a…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…