Related papers: Exploring transport mechanisms in atomic precision…
Atomic and single-molecule junctions represent the ultimate limit to the miniaturization of electrical circuits. They are also ideal platforms to test quantum transport theories that are required to describe charge and energy transfer in…
Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating…
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The…
Understanding heat transport in organic semiconductors is of fundamental and practical relevance. Therefore, we study the lattice thermal conductivities of a series of (oligo)acenes, where an increasing number of rings per molecule leads to…
Laser cooling and trapping offers the possibility of confining a sample of radioactive atoms in free space. Here, we address the question of how best to take advantage of cold atom properties to perform the observation of as highly…
We study ballistic interfacial thermal transport across atomic junctions. Exact expressions for phonon transmission coefficients are derived for thermal transport in one-junction and two-junction chains, and verified by numerical…
Thermal transport in low-dimensional semiconductors is crucial for advancing thermal management in nanoelectronics, quantum devices, and thermoelectric devices. Recent molecular dynamics (MD) studies have identified a nonmonotonic…
A mechanism of quantum-mechanical tunneling is based on electron-wavefunction and is used to explain ohmic contact as well as tunnel and Zener diodes. Tunneling is the important example of wave-particle duality. In this study, an attempt is…
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to…
The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by the electric field inside the oxide film. The PDM assumes a constant…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
Atomic sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic…
The operation of the primary Coulomb blockade thermometer (CBT) is based on a measurement of bias voltage dependent conductance of arrays of tunnel junctions between normal metal electrodes. Here we report on a comparison of a CBT with a…
Localized laser heating creates temperature gradients in all directions and thus leads to three-dimensional electron flux in metallic materials. Temperature gradients in combination with material magnetization generate thermomagnetic…
This paper extends the modern theory of tunneling transport to finite temperatures. The extension enables applications to molecular electronic devices connected to semiconducting leads. The paper presents an application of the theory to…
The electron transport through a three-terminal single-molecular transistor (SMT) is theoretically studied. We find that the differential conductance of the third and weakly coupled terminal versus its voltage matches well with the spectral…
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or…
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
We correlate transmission electron microscope (TEM) pictures of superconducting In contacts to an AlGaAs/GaAs heterojunction with differential conductance spectroscopy performed on the same heterojunction. Metals deposited onto a (100)…