Related papers: Exploring transport mechanisms in atomic precision…
We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
Current flow in electronic devices can be asymmetric with bias direction, a phenomenon underlying the utility of diodes and known as non-reciprocal charge transport. The promise of dissipationless electronics has recently stimulated the…
We study the dynamics of a quantum particle in a constricted two-dimensional channel and analyze how the onset of quantum corrections impacts the (semi-)classical high-temperature behaviour, as temperature is lowered. We characterize both…
Coherent transport by adiabatic passage has recently been suggested as a high-fidelity technique to engineer the centre-of-mass state of single atoms in inhomogenous environments. While the basic theory behind this process is well…
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…
Wavepacket transport across a nonlinear region is studied numerically at zero and finite temperatures. In contrary to the zero temperature case which demonstrates ballistic transport, finite temperature lattice vibrations suppresses the…
We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and…
Parasitic two-level tunneling systems originating from structural material defects affect the functionality of various microfabricated devices by acting as a source of noise. In particular, superconducting quantum bits may be sensitive to…
A tunnelling conductivity between a heavy fermion metal and a simple metallic point is considered. We show that at low temperatures this conductivity can be noticeably dissymmetrical with respect to the change of voltage bias. The…
Amplification by stimulated emission of radiation provides an intriguing means for increasing the sensitivity of Atomic Parity Violation (APV) measurements in a pump-probe configuration well adapted to the 6S-7S cesium transition. It takes…
We study the dynamics of phonon-mediated qubit-qubit interactions between trapped ions in the presence of an ultracold atomic gas. By deriving and solving a master equation to describe the combined system, we show that the presence of the…
Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures…
Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger…
Atom probe tomography (APT) analysis conditions play a major role in the composition measurement accuracy. Preferential evaporation, which significantly biases apparent composition, more than other well-known phenomena in APT, is strongly…
Predicting nanoscale thermal transport in dielectrics requires models, such as the Boltzmann transport equation (BTE), that account for phonon boundary scattering in structures with complex geometries. Although the BTE has been validated…
We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the…
Low band gap thermoelectric materials suffer from bipolar effects at high temperatures, with increased electronic thermal conductivity and reduced Seebeck coefficient, leading to reduced power factor and low ZT figure of merit. In this work…
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The…
We report measurements of photon-assisted transport and noise in a tunnel junction in the regime of dynamical Coulomb blockade. We have measured both dc non-linear transport and low frequency noise in the presence of an ac excitation at…