Related papers: Universal Model for Ferroelectric Capacitors Opera…
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $\mu$m $\times$ 30…
The remarkable advances achieved in two-dimensional materials are now being directly transposed to low-dimensional oxides. Here we show using first-principles-based atomistic simulations that ultrathin freestanding ferroelectric layers host…
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the…
We afford an experimentally feasible platform to study Boltzmann negative temperatures. Our proposal takes advantage of well-known techniques of engineering Hamiltonian to achieve steady states with highly controllable population inversion.…
Ultracold fermionic atoms in optical lattices offer pristine realizations of Hubbard models, which are fundamental to modern condensed matter physics. Despite significant advancements, the accessible temperatures in these optical lattice…
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC)…
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…
We report a heat dynamics analysis of the electrocaloric effect (ECE) in commercial multilayer capacitors based on BaTiO3 dielectric, a promising candidate for applications as a solid state cooling device. Direct measurements of the time…
Quantum technologies offer unprecedented capabilities in computation and secure information transfer. Their implementation requires qubits to operate at cryogenic temperatures (CT) while control and readout electronics typically still…
We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The…
An emerging area in condensed matter physics is the use of multilayered heterostructures to enhance ferroelectricity in complex oxides. Here, we demonstrate that optically pumping carriers across the interface between thin films of a…
The prototypical antiferroelectric perovskite $\rm PbZrO_3$ (PZO) has garnered considerable attentions in recent years due to its significance in technological applications and fundamental research. Many unresolved issues in PZO are…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
A possibility was assessed to modify physico-chemical properties of ferronematic mixtures by introducing additional mesogenic and non-mesogenic components. The mixture, consisting of RM734 and DIO at the 70:30 weight ratio of the…
In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the…
We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD)…
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the…
Ferroelectric switching governs the functional properties of ferroelectric perovskites. It is widely accepted that this switching depends on domain nucleation and pinning and that these processes can be controlled by the defect structure.…