Related papers: TCAD Parameters for 4H-SiC: A Review
Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based…
The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications.…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces…
This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide…
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the…
The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect,…
Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary and relatively abundant intrinsic defect, no optical signal…
When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect…
We have performed density functional calculations of the formation energies of substitutional transition metal (TM) defects, C vacancies, and C interstitial defects in TiC. In addition we have evaluated the migration energy barriers for C…
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…
By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic…