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Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on…
Two-dimensional (2D) $\beta$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type…
We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a…
Microwave synthesis was optimized for preparing novel monoclinic Tin-doped Barium Niobate ceramics (Ba1-xSnxNb2O6; x= 0.0, 0.01, 0.05, 0.1, 0.2, 0.3) BSN. The intensity of monoclinic phase formation was observed to decrease on increasing…
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…
Sn1-xInxTe has been synthesized and studied recently as a candidate topological superconductor. Its superconducting critical temperature increases with Indium concentration. However, the role of Indium in altering the normal state band…
Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…
Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the…
Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3…
Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time…
In this work, we use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator Bi2Se3 thin films into the intrinsic (bulk-insulating) regime. We demonstrate the tuning and stabilization of…
Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…
The In-doped topological crystalline insulator Sn$_{1-x}$In$_x$Te is a promising candidate for a topological superconductor, where it is theoretically suggested that In creates an impurity state responsible for superconductivity. We…
Two essential ingredients for the quantum anomalous Hall (QAH) effect, i.e. topological and magnetic orders, can be combined by doping magnetic ions into a topological insulator (TI) film. Through this approach, the QAH effect has been…
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS…
We report an unexpected positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator \NBS via $dc$ SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…