We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (B). We find that the high-B insulator exhibits activated transport with a characteristic temperature, TI. TI has a maximum value (TIp) that is close to the superconducting transition temperature (Tc) at B = 0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. TIp and Tc display opposite dependences on the disorder strength.
@article{arxiv.cond-mat/0307648,
title = {Superconductivity-Related Insulating Behavior},
author = {G. Sambandamurthy and L. W. Engel and A. Johansson and D. Shahar},
journal= {arXiv preprint arXiv:cond-mat/0307648},
year = {2009}
}
Comments
Tex file and 5 figures; Revised version; To appear in Phys. Rev. Lett. (2004)