Related papers: Optimizing defect states in $(Bi_{0.3}Sb_{0.7})_{2…
Topological insulators in the Bi2Se3 family have an energy gap in the bulk and a gapless surface state consisting of a single Dirac cone. Low frequency optical absorption due to the surface state is universally determined by the fine…
Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…
Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…
Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $\sigma = 3300\,{\rm…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic…
The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of…
Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the…
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface…
The electronic and magnetic properties in ABO3 perovskite oxides are extremely sensitive to lattice structure but also the dimensionality, such as the thickness in thin film form. Here, we report the thickness-dependent electro-magnetic…
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
Three-dimensional topological crystalline insulators were recently predicted and observed in the SnTe class of IV-VI semiconductors, which host metallic surface states protected by crystal symmetries. In this work, we study thin films of…
In this work we present a systematic in-depth study of how we can alter the magneto-transport properties of magnetic topological insulator thin films by tuning the parameters of the molecular beam epitaxy. First, we show how a varying…
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the…
We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the…
We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a…
Sr3Ir2O7 exhibits a novel Jeff=1/2 insulating state that features a splitting between Jeff=1/2 and 3/2 bands due to spin-orbit interaction. We report a metal-insulator transition in Sr3Ir2O7 via either dilute electron doping (La3+ for Sr2+)…
Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly…
The stability, electronic structure, optical and thermoelectric properties of Te-doped BaTiO3 are investigated by first-principal calculation based on the density functional theory and Boltzmann transport theory implemented in WIEN2K and…