Related papers: Engineering Si-Qubit MOSFETs: A Phase-Field Modeli…
Double-slit experiments inferring the phase and the amplitude of the transmission coefficient performed at quantum dots (QD), in the Coulomb blockade regime, present anomalies at the phase changes depending on the number of electrons…
We consider a prime example of simulating interacting relativistic QFT with cold atoms: the realisation of the sine-Gordon model by tunnel-coupled quasi-1D Bose gases. While experiments have shown that it can realise the sine-Gordon model…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose…
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
Current control techniques for cryogenically cooled qubits are realized with coaxial cables, posing multiple challenges in terms of cost, thermal load, size, and long-term scalability. Emerging approaches to tackle this issue include…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
Quantum thermometry plays a critical role in the development of low-temperature sensors and quantum information platforms. In this work, we propose and theoretically analyze a hybrid circuit quantum electrodynamics architecture in which a…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures.…
Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…
Qudits, or multi-level quantum information carriers, present a promising path for scaling quantum computers. However, their use introduces increased complexity in quantum logic, necessitating careful control of relative phases between…
The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing;…
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…
Obtaining the total wavefunction evolution of interacting quantum systems provides access to important properties, such as entanglement, shedding light on fundamental aspects, e.g. quantum energetics and thermodynamics, and guiding towards…
The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…