Related papers: A 5T-2MTJ STT-assisted Spin Orbit Torque based Ter…

Discrete ordinates $S_N$ transport solvers on unstructured meshes pose a challenge to scale due to complex data dependencies, memory access patterns and a high-dimensional domain. In this paper, we review the performance bottlenecks within…

Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit…

The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years.…

The use of analog resistance states for storing weights in neuromorphic systems is impeded by fabrication imprecision and device stochasticity that limit the precision of synapse weights. This challenge can be resolved by emulating analog…

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…

In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…

Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…

Recent advances in LLMs have outpaced the computational and memory capacities of edge platforms that primarily employ CPUs, thereby challenging efficient and scalable deployment. While ternary quantization enables significant resource…

In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer…

Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…

Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…

A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…