Related papers: On the negative capacitance in ferroelectric heter…
The many-body ground state of a two-dimensional electron system can be tuned by Coulomb engineering through control of the dielectric environment. However, in conventional dielectrics the static permittivity is restricted to positive…
Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the…
An analytical theory is developed for predicting the nonlinear susceptibility of ionic polarization to continuous electromagnetic waves in both bulk and strained thin film ferroelectrics. Using a perturbation method for solving the…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…
The rotational instability of the electric polarization P during phase transformations between ferroelectric phases is of great practical interest, since it may be accompanied by extremely large values of the piezoelectric coefficient, and…
Antiferroelectrics generate significant interest since their polarization versus electric field (PE) curves show typical double-hysteresis loops appealing for various applications. Unfortunately, antiferroelectrics are rare. In magnetic…
The so-called negative electron compressibility refers to the lowering of the chemical potential of a metallic system when the carrier density increases. This effect has often been invoked in the past to explain the enhancement of the…
The dielectric constant or relative permittivity of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and…
Supercapacitors have been attracting significant attention as promising energy storage devices. However, the voltage window limitation associated with electrolyte solutions has hindered the improvement of their capacitance. To address this…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
Active control of wrinkling in soft film-substrate composites using electric fields is a critical challenge in tunable material systems. Here, we investigate the electro-mechanical instability of a soft dielectric film bonded to a…
In this work we investigate the electrostatic properties of two dimensional electron system (2DES) in the integer quantum Hall regime. The alternating screening properties of compressible and incompressible strips are formed due to edge…
We calculated the frequency dependent dielectric response (electric susceptibility) of layered ferroelectric-dielectric junction, biased by the time-dependent harmonic voltage with single frequency $\omega$. Working point is stabilized, by…
Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…
The role of the surface during polarization switching in constrained ferroelectrics is investigated using the time-dependent Ginzburg-Landau theory. The model incorporates the elastic and electrostrictive effects in the form of a long-range…
We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/$\alpha$-RuCl$_3$ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no…
Magnetoelectric properties of a coupled spin-electron model on a doubly decorated square lattice in an external electric field applied along the crystallographic axis [11] are rigorously examined with the help of generalized…
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…
First-order electric dipole response functions are implemented for cavity quantum electrodynamics (QED) generalizations of Hartree-Fock (HF) and Kohn-Sham density functional theory (DFT) in order to assess the degree to which static…
We suggest the nondestructive method for determination of the dielectric constant of substrate-deposited thin films by capacitance measurement with two parallel wires placed on top of the film. The exact analytical formula for the…