Related papers: On the negative capacitance in ferroelectric heter…
Enhancing the performance of nanoscale ferroelectric (FE) field-effect transistors and FE capacitors for memory devices and logic relies on miniaturizing the metal electrode/ferroelectric area and reducing the thickness of the insulator.…
Abstract Characterizing the crystalline disorder properties of the heterovalent ternary semiconductors continues to challenge solid-state theory. Here, a Landau theory is developed for the wurtzite-based ternary semiconductor ZnSnN2. It is…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
Ferroelectricity in hafnia is often regarded as a breakthrough discovery in ferroelectrics, potentially able to revolutionize the whole field. Despite increasing interests, a comprehensive understanding of the many factors driving the…
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…
In this work we present a model for the photoconductivity of two-dimensional electron system in a perpendicular homogeneous magnetic field, a weak lateral superlattice, and exposed to millimeter irradiation. The model includes the microwave…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
Symmetry-breaking is pivotal for controlling ferroelectric, ferroelastic and/or ferromagnetic functions of materials, which enables applications in sensors, memories, transducers or actuators. Commonly, ferroic phases emerge from descending…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…
We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…
We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…
The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect…
For the first time in a bulk proper uniaxial ferroelectrics, double antiferroelectric-like hysteresis loops have been observed in the case of Sn$_2$P$_2$S$_6$ crystal. The quantum anharmonic oscillator model was proposed for description of…
We investigate the ferroelectric phase transition and domain formation in a periodic superlattice consisting of alternate ferroelectric (FE) and paraelectric (PE) layers of nanometric thickness. We find that the polarization domains formed…
We investigate the effects of the competition between exchange ($J$) and dipolar ($D$) interactions on the magnetization reversal mechanisms of ferromagnetic nanotubes. Using first atomistic Monte Carlo (MC) simulations for a model with…
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which…
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown…