Related papers: On the negative capacitance in ferroelectric heter…
We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…
We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric, Pb(Zr0.2Ti0.8)O3 and dielectric, SrTiO3, the composite capacitance was…
In this paper we revisit the theory of negative capacitance, in a (i) standalone ferroelectric, (ii) ferroelectric-dielectric, and (iii) ferroelectric-semiconductor series combination, and show that it is important to minimize the total…
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are…
The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric…
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and…
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be explained by a delayed response of ferroelectric domain…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer…
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for…
Transient negative differential capacitance (NC), the dynamic reversal of transient capacitance in an electrical circuit is of highly technological and scientific interest since it probes the foundation of ferroelectricity. In this letter,…
We give detailed analysis of the effect of depolarizing field in nanometer-size ferroelectric capacitors studied by Kim et al. [Phys. Rev. Lett. 95, 237602 (2005)]. We calculate a critical thickness of the homogeneous state and its…
Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very…
Extensive numerical calculations show that the capacitance of back-gated nanowires with various degrees of dielectric embeddings is accurately described with an effective dielectric constant as long as the difference between the dielectric…