Related papers: Saturable absorption in highly excited silicon and…
We present transient absorption spectra of an extreme ultraviolet attosecond pulse train in helium dressed by an 800 nm laser field with intensity ranging from $2\times10^{12}$ W/cm$^2$ to $2\times10^{14}$ W/cm$^2$. The energy range probed…
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures,…
Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of…
Electron-hole pairs in semiconductors are essential for solar cells and fast electronic circuitry, but the competition between carrier transport and relaxation into heat limits the efficiency and speed. Here we use ultrafast electron…
In laser-solid interactions, electrons may be generated and subsequently accelerated to energies of the order-of-magnitude of the ponderomotive limit, with the underlying process dominated by direct laser acceleration. Breaking this limit,…
A novel approach based on the merging of the out--of--equilibrium Green's function method with the ab-initio, Density--Functional--Theory is used to describe the ultra--fast carriers relaxation in Silicon. The results are compared with…
An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transition of $^{88}$Sr$^+$.…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of…
Bloch equations for the atomic population and the polarization/coherence and the equation of motion for the photon number in a laser are solved in steady state as a function of the pump rate. Two level atom and two modes of three levels…
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical…
Based on the results of exact consideration of electron-ion Coulomb interaction, by numerical simulations for ultimate absorption coefficient, we study the practically more interesting case of absorption of hard x-ray quanta of frequency…
Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of…
Simultaneous measurements of transient transmission and reflectivity were performed in the unintentionally doped InN film to reveal ultrafast optical bleaching and its recovery behavior under intense laser irradiation. The optical bleaching…
We present an electron energy loss study using energy filtered TEM of spatially resolved surface plasmon excitations on a silver nanorod of aspect ratio 14.2 resting on a 30 nm thick silicon nitride membrane. Our results show that the…
Pauli blocking of spontaneous emission by a single excited-state atom has been predicted to be dramatic at low temperature when the Fermi energy $E_\mathrm{F}$ exceeds the recoil energy $E_\mathrm{R}$. The photon scattering rate of a…
The modern means of controlled irradiation by femtosecond lasers or swift heavy ion beams can transiently produce such energy densities in samples that reach collective electronic excitation levels of the warm dense matter state where the…
A free electron can temporarily gain a very significant amount of energy if it is overrun by an intense electromagnetic wave. In principle, this process would permit large enhancements in the center-of-mass energy of electron-electron,…
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…
The self-starting dynamics of a model for passively mode-locked lasers with saturable absorber, in which the optical amplifier has a saturable nonlinearity, is examined. The basic assumption is that the laser will operate in the mode-locked…