Related papers: Saturable absorption in highly excited silicon and…
Based on the general thermodynamic analysis of Polanyi adsorption potential, the adsorption potential condition for superconductors is obtained exactly by using the quantum state equation we presented. Because this adsorption potential…
First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Cs adsorption on the Si(001) surface for 0.5 and 1 ML coverages. We found that the saturation…
A hybrid 2D theoretical model is presented to describe thermoplastic deformation effects on silicon surfaces induced by single and multiple ultrashort pulsed laser irradiation in submelting conditions. An approximation of the Boltzmann…
Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results…
Laser fields can be shaped on a subwavelength scale as to have a specific distribution in spin angular momentum, orbital structure, or topology. We study how these various features affect the strongly nonlinear electron dynamics.…
Dependence of the energy of ions accelerated during interaction of the laser pulse obliquelly incident on the thin foil target on the laser polarization is studied experimentally and theoretically. We found that the ion energy being maximal…
The ultrafast time-dependence of the energy absorption of covalent solids upon excitation with femtosecond laser pulses is theoretically analyzed. We use a microscopic theory to describe laser induced structural changes and their influence…
In nonlinear Thomson scattering, a relativistic electron reflects and re-radiates the photons of a laser pulse, converting optical light to x rays or beyond. While this extreme frequency conversion offers a promising source for probing…
Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…
We address surface solitons supported by the interface of optical lattices imprinted in saturable media with surface-localized gain. The nonlinearity saturation puts restrictions on the maximal energy flow carried by surface solitons. As a…
Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface…
We observe near 100 % absorption of light in intense ultrashort laser plasma interaction in a metal coated (Au on glass) sub-lambda grating structure under suitable conditions and the subsequent 'hot' electron generation from the grating…
The energy acquisition based on resonant excitations are of great importance in chemical and biological systems. Here, the intramolecular resonant absorption of polarized mid-infrared pulses by bulk water and surface water is investigated…
The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an…
We report the observation of a phonon bottleneck effect impacting the thermal depopulation of photoexcited shallow defects in high-resistivity silicon. Using time-resolved terahertz (THz) spectroscopy, near-band-gap excitation produces a…
Hot electron temperatures and electron energy spectra in the course of interaction between intense laser pulse and overdense plasmas are reexamined from a viewpoint of the difference in laser wavelength. The hot electron temperature…
We theoretically investigate ultrafast and nonlinear optical properties of graphite thin films based on first-principles time-dependent density functional theory. We first calculate electron dynamics in a unit cell of graphite under a…
We show that if the laser is intense enough, it may always ionize an atom or induce transitions between discrete energy levels of the atom, no matter what is its frequency. It means in the quantum transition of an atom interacting with an…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
We formulate a multi-physics model to describe the nonlinear propagation of a femtosecond, near-infrared, tightly focused laser pulse in a transparent dielectric. The application of our model to the case of bulk sapphire shows that even…