Related papers: Saturable absorption in highly excited silicon and…
The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photo-excited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule…
It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\,\mu\mathrm{m}$. In this work, we use a…
A density-dependent two-temperature model is applied to describe laser excitation and the following relaxation processes of silicon in an external electric field. Two approaches on how to describe the effects of the external electric field…
In a low-temperature study with a scanning tunneling microscope (STM), the irreducible lateral motion of a CO molecule adsorbed on a Si(001) surface showed a hyperlinear dependence on the tunneling current. This dependence implies that the…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
The effect of the electron temperature on both the light absorption and the scattering by metal nanoparticles (MNs) with excitation of the surface plasmon electron vibrations is studied in the framework of the kinetic theory. The formulae…
The transient Pauli blocking effect offers a promising route for achieving ultrafast optical switching in semiconductors, enabling a rapid switching from an initially opaque state to a relatively transparent state upon photoexcitation.…
The photoexcited state in superconducting metals and alloys was studied via pump-probe spectroscopy. A pulsed Ti:sapphire laser was used to create the non-equilibrium state and the far-infrared pulses of a synchrotron storage ring, to which…
The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
The effects of chemical disorder on the electronic and optical properties of semiconductor alloy multilayers are studied based on the tight-binding theory and single-site coherent potential approximation. Due to the quantum confinement of…
Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is…
We present the first measurements of inter-subband absorption of microwaves in surface electrons on liquid helium subjected to perpendicular magnetic field B. In quantizing B, the power absorption shows intermittent regions of enhanced and…
Using time-dependent density-functional theory, we investigate the electronic stopping power of self-irradiated silicon through non-adiabatic dynamics simulations. For specific velocities above 0.6 atom units, electronic stopping shows a…
Photons do not carry sufficient momentum to induce indirect optical transitions in semiconducting materials such as silicon, necessitating the assistance of lattice phonons to conserve momentum. Compared to direct bandgap semiconductors,…
Upon the excitation by an ultrashort laser pulse the conditions in a material can drastically change, altering its optical properties and therefore the relative amount of absorbed energy, a quan- tity relevant for determining the damage…
We exploit the effect of light-induced atomic desorption to produce high atomic densities ($n\gg k^3$) in a rubidium vapor cell. An intense off-resonant laser is pulsed for roughly one nanosecond on a micrometer-sized sapphire-coated cell,…
Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the…
This paper discusses the effect of saturated absorption on the quantum features of a sub-Poissonian laser. It is shown that when both media (laser and absorbing) are saturated, the appearance of an additional element in the cavity does not…
We present a finite-temperature density functional theory investigation of the nonequilibrium transient electronic structure of warm dense Li, Al, Cu, and Au created by laser excitation. Photons excite electrons either from the inner shell…