Related papers: Reconfigurable Spin Logics and High-density Multis…
Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a…
Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in…
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
In this paper, the intrinsic physical characteristics of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons in neuromorphic architectures. Performance comparisons with the…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Construction of parallel logic gates at nano-scale level undoubtedly improves the efficiency of computable operations. In this work we put forward a new idea of designing two distinct logical operations {\em simultaneously} in the two…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…
Knots, characterized by topological invariants called the Hopf number $H$, arise from the intertwining of strings and exhibit diverse configurations. The knot structures have recently been observed in condensed matters, as examplified by a…
Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…