Related papers: Reconfigurable Spin Logics and High-density Multis…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…
We fabricated a wedge-shaped Pt/Co/Pt device with perpendicular magnetic anisotropy and manifested that the Co magnetization can be solely switched by spin-orbit torque without any magnetic field. Similar to the synaptic weight, we observed…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light…
Electric field induced spin-orbit torques are the crucial mechanism for electric regulations of antiferromagnetic order. However, the spin-orbit torques in antiferromagnets and the induced spin dynamics remain largely unexplored. In this…
Understanding the role of spin-orbit coupling (SOC) has been crucial to controlling magnetic anisotropy in magnetic multilayer films. It has been shown that electronic structure can be altered via interface SOC by varying the superlattice…
A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the…
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…
Extracting quantitative information of neuronal signals by non-invasive imaging is an outstanding challenge for understanding brain function and pathology. However, state-of-the-art techniques offer low sensitivity to deep electrical…
The increasing capacity of modern computers, driven by Moore's Law, is accompanied by smaller noise margins and higher error rates. In this paper we propose a memory device, consisting of a ring of two identical overdamped bistable…
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
To bring Spin Wave (SW) based computing paradigm into practice and develop ultra low power Magnonic circuits and computation platforms, one needs basic logic gates that operate and can be cascaded within the SW domain without requiring back…
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…